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Observation of diffusion layers in semiconductors using FIB-SEM.

Shorter delivery time than his method! Both shape observation using FIB-SEM and diffusion layer observation can be performed!

We are conducting "Observation of the diffusion layer of semiconductors using FIB-SEM." By creating cross-sections using the FIB method and observing them with SEM, we visualized the diffusion layer of semiconductors and evaluated their shapes. In a case where the difference in built-in potential was visualized using the Inlens detector of the SEM, a difference in the energy of secondary electrons generated in the N-type and P-type regions occurred due to the built-in potential. This difference in trajectories is detected by the SEM detector. 【Features】 - Both shape observation and diffusion layer observation can be performed using FIB-SEM. - Shorter delivery times compared to other methods. - Concentrations can be detected up to 10E16. - While the PN interface can be visualized, the concentration differences of N+/N- and P+/P- cannot be detected. *For more details, please refer to the PDF document or feel free to contact us.